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Power Transistors
2SC2209
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SA0963 (2SA963) I Features
* Large collector power dissipation PC * Output of 5 W can be obtained by a complementary pair with 2SA0963
7.5+0.5 -0.1 120
11.00.5
2.90.2
2.30.2 3.80.3
1.90.1
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC = 25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 50 40 5 3 1.5 10 150 -55 to +150 Unit V V V A A W C C
1 2 0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 3 1.260.1
16.01.0
1 : Emitter 2 : Collector 3 : Base TO-126A Package
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio
*
Conditions VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 VCE = 5 V, IC = 1 A IC = 1.5 A, IB = 150 mA IC = 2 A, IB = 0.2 A VCB = 5 V, IE = - 0.5 A, f = 200 MHz VCB = 5 V, IE = 0, f = 1 MHz
Min
Typ
Max 1 100 10
3.050.1
Unit A A A V V
IEBO VCBO VCEO hFE VCE(sat) VBE(sat) fT Cob
50 40 80 220 1 1.5 150 50
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Note) *: Rank classification Rank hFE Q 80 to 160
V V MHz pF
R 120 to 220
Note)The part number in the parenthesis shows conventional part number.
1
2SC2209
PC T a
12 TC=Ta 4.0 3.5 10
Power Transistors
IC VCE
TC=25C
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 1 TC=100C 25C 0.1 -25C
Collector power dissipation PC (W)
Collector current IC (A)
3.0 2.5 2.0 1.5
IB=40mA 35mA 30mA 25mA 20mA 15mA 10mA
0.3
8
6
0.03
4
0.01
1.0 5mA 0.5
2
0.003
0 0 40 80 120 160 200
0 0 2 4 6 8 10
0.001 0.01
0.03
0.1
0.3
1
3
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 10 1000
hFE IC
240 VCE=5V
fT I E
VCB=5V f=200MHz TC=25C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
1 3
200
3 TC=-25C 100C 0.3 25C 0.1
300
TC=100C 25C -25C
160
1
100
120
30
10
80
0.03
3
40
0.01 0.01
0.03
0.1
0.3
1
3
1 0.01
0.03
0.1
0.3
0 -0.01 -0.03 -0.1 -0.3
-1
-3
-10
Collector current IC (A)
Collector current IC (A)
Emitter current IE (A)
Cob VCB
120
VCER RBE
Collector to emitter voltage VCER (V)
IE=0 f=1MHz TC=25C 60 TC=25C 50 300 1000
ICBO Ta
VCB=20V
Collector output capacitance Cob (pF)
100
60
30
ICBO (Ta) ICBO (Ta=25C)
0.01 0.1 1 10
80
40
100
30
40
20
10
20
10
3
0 1 3 10 30 100
0 0.001
1 0 20 40 60 80 100
Collector to base voltage VCB (V)
Base to emitter resistance RBE (k)
Ambient temperature Ta (C)
2
Power Transistors
Area of safe operation (ASO)
10 3 ICP IC t=1s 0.3 0.1 0.03 0.01 Single pulse TC=25C
2SC2209
Collector current IC (A)
1
t=10ms
0.003 0.001 0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
3
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2001 MAR

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